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IEEE Trans. Electr. Dev., 46, 605 (1999).

[11] E.V. Kalinina, G.F. Kholuyanov, A.V. Shchukarev, N.S. Savkina, A.I. Babanin, M.A. Yagovkina, N.I. Kuznetsov. Diamond Рис. 6. Частотные характеристики затухания и вносимых and Related Materials, 8, 1114, (1999).

потерь SiC p-i-n-диодных переключений d, мкм: 1 Ч 130, 2 Ч 80.

Редактор Л.В. Беляков Физика и техника полупроводников, 2005, том 39, вып. 766 Е.В. Богданова, А.А. Волкова, А.Е. Черенков, А.А. Лебедев, Р.Д. Каканаков, Л.П. Колаклиева...

4H-SiC p-i-n-diode obtained by combination of the physical epitaxy and CVD E.V. Bogdanova, A.A. Volkova, A.E. Cherenkov, A.A. Lebedev, R.D. Kakanakov,, L.P. Kolaklieva,, G.A. Sarov,, T.M. Cholakova,, A.V. Kirilov,+, L.P. Romanov+ Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia Institute of Applied Physics, 4000 Plovdiv, Bulgaria + SvetlanaЦElectropribor, 194156 St. Petersburg, Russia

Abstract

Possibility of the utilization of the sublimation epitaxy in vacuum for obtaining of heavily doped (Na - Nd 1 1019 cm-3) p+-4H-SiC epilayers on the base of n-4H-SiC lightly doped epilayers grown by CVD was shown.

Au/Pd/Ti/Pd contact to p-4H-SiC is found to be an optimal systems as since combines low contact resistivity ( 2 10-5 cm2) and high thermal stability (up to 700C). The package diodes having breakdown voltage up to 1400 V, using p-n-structure grown was produced.

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