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Presented is a numerical model for the simulation of the microstructure and electrical properties of semiconductor ceramical materials in the case of the average grain size is comparable to the grain boundary depleted region and the double Schottky barriers of the neighbouring grain boundaries overlap. The 2D simulation is performed in the driftЦdiffusion approximation using the Voronoi network method. The influence of the grain size on the voltЦampere characteristic and specific electrical capacitance is analyzed for p-type SrTiO3.

Физика и техника полупроводников, 2005, том 39, вып. Pages:     | 1 | 2 | 3 |    Книги по разным темам