Книги по разным темам Pages:     | 1 | 2 |

A simple analytical method has been suggested for [19] M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur. In: Handbook calculating the mobility of majority carriers in semiconductors.

Series on Semiconductor Parameters (World Scientific, Singapore, 1996) v. 1. The technique proposed makes it possible to satisfactorily describe [20] M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur. In: Properties all available experimental data in a wide range of temperatures of advanced semiconductor materials GaN, AlN, InN, SiC, and doping levels in different semiconductors including elemenSiGe (N. Y., John Wiley & Sons Inc., 2001).

tary ones (silicon), AIIIBV (gallium arsenide), AIVBIV (different [21] M.E. Levinshtein, T.T. Mnatsakanov, P.A. Ivanov, J.W. Palpolytypes of silicon carbide), and AIIIN (gallium nitride). A high mour, S.L. Rumyantsev, R. Singh, S.N. Yurkov. IEEE Trans.

accuracy of calculations allows us to conclude that the suggested Electron. Dev., 48, 1703 (2001).

method can be used when describing the carrier mobility in [22] T.T. Mnatsakanov, M.E. Levinshtein, S.N. Yurkov, P.A. Ivanov, other semiconductor materials. Simplicity and accuracy of the A.G. Tandoev, J.W. Palmour, A.K. Agarwal. Sol. St. Electron., technique makes it promising for computer simulations of multy46, 528 (2002).

layer semiconductor structures.

[23] M.E. Levinshtein, T.T. Mnatsakanov, S.N. Yurkov, P.A. Ivanov, A.G. Tandoev, A.K. Agarwal, J.W. Palmour. Sol. St. Electron., 46, 1953 (2002).

[24] T.T. Mnatsakanov, M.E. Levinshtein, P.A. Ivanov, J.W. Palmour, A.G. Tandoev, S.N. Yurkov. J. Appl. Phys., 93, 1095 (2003).

[25] M.E. Levinshtein, P.A. Ivanov, T.T. Mnatsakanov, S.N. Yurkov, A.K. Agarwal, J.W. Palmour. Sol. St. Electron., 47, 699 (2003).

Редактор Л.В. Беляков Физика и техника полупроводников, 2004, том 38, вып. Pages:     | 1 | 2 |    Книги по разным темам